Concepedia

Publication | Closed Access

p‐type conducting ZnO: fabrication and characterisation

DOI

39

Citations

0

References

2005

Year

E. Kamińska, A. Piotrowska, J. Kossut, Renata Butkutė, W. Dobrowolski, R. J. Lukasiewicz, A. Barcz, R. Jakieła, E. Dynowska, E. Przeździecka,
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Abstract

We report on the fabrication of ZnO:N by thermal oxidation of sputter-deposited zinc nitride. Through optimising several technological steps we achieved p-type conductivity with carrier concentration in mid 1017 cm–3 range and mobility of ∼10 cm2/Vs. PL spectra of p-type ZnO:N films show a sharp peak at 3.36 eV, most likely due to neutral acceptor bound excitons. The transmittance of p-ZnO:N in the whole visible spectrum is ∼80 % making it suitable for transparent electronics. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)