V. Pačebutas

GaBiAs: A material for optoelectronic terahertz devices

K. Bertulis, A. Krotkus, G. Aleksejenko et al. · Applied Physics Letters · 2006 · 149 citations

Thz Photonics, Terahertz Technology, Optical Materials +21

Terahertz time-domain-spectroscopy system based on femtosecond Yb:fiber laser and GaBiAs photoconducting components

V. Pačebutas, Andrius Bičiūnas, S. Balakauskas et al. · Applied Physics Letters · 2010 · 72 citations

Thz Photonics, Terahertz Technology, Optical Materials +23

Multi‐quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth

Renata Butkutė, Andrejus Geižutis, V. Pačebutas et al. · Electronics Letters · 2014 · 63 citations

Qw Structures, Engineering, Laser Applications +16

Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching

J. Sabataityt≐, I. Šimkien≐, R.A. Bendorius et al. · Materials Science and Engineering C · 2002 · 45 citations

Electrical Engineering, Photoluminescence, Engineering +5

Structure and Optical Properties of InGaAsBi with up to 7% Bismuth

J. Devenson, V. Pačebutas, Renata Butkutė et al. · Applied Physics Express · 2012 · 41 citations

Optical Materials, Engineering, Optoelectronic Devices +16