Amr M. Bayoumi

MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

Changhoon Choi, Jung-Suk Goo, Tae-Young Oh et al. · IEEE Electron Device Letters · 1999 · 70 citations

Materials Science, Device Modeling, Electrical Engineering +14

Scientific and Engineering Computing Using ATI Stream Technology

Amr M. Bayoumi, Michael Chu, Yasser Y. Hanafy et al. · Computing in Science & Engineering · 2009 · 32 citations

Stream Processing, Gpu Architecture, Engineering +14

Impact of Bottom Dielectric Isolation of Si-Stacked Nanosheet Transistor on Stress and Self-Heating at 3-nm Node and Beyond

Mohamed Saleh, Amr M. Bayoumi, Hamdy Abdelhamid · IEEE Transactions on Electron Devices · 2023 · 21 citations

Massive parallelization of SPICE device model evaluation on GPU-based SIMD architectures

Amr M. Bayoumi, Yasser Y. Hanafy · 2008 · 17 citations

Engineering, Gpu Benchmarking, Computer Architecture +17

C-V and gate tunneling current characterization of ultra-thin gate oxide MOS (t/sub ox/=1.3-1.8 nm)

Chang-Hoon Choi, Jung-Suk Goo, Tae-Young Oh et al. · 2003 · 16 citations

Device Modeling, Electrical Engineering, Carrier Quantization +15