Matthew Whiteside

Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate

Matthew Whiteside, S. Arulkumaran, Geok Ing Ng · Materials Science and Engineering B · 2021 · 24 citations

Engineering, Materials Engineering, Materials Science +14

Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes

Matthew Whiteside, S. Arulkumaran, Y. Dikme et al. · Materials Science and Engineering B · 2020 · 13 citations

Engineering, Materials Engineering, Materials Science +16

On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate

Matthew Whiteside, S. Arulkumaran, Soon Siang Chng et al. · Applied Physics Express · 2020 · 12 citations

Engineering, Materials Engineering, Materials Science +17

Dielectric dispersion and superior thermal characteristics in isotope-enriched hexagonal boron nitride thin films: evaluation as thermally self-dissipating dielectrics for GaN transistors

Soon Siang Chng, Zehui Du, Xizu Wang et al. · Journal of Materials Chemistry C · 2020 · 12 citations · Full text

Natural Sciences, Materials Science, Physics +17