Dielectric dispersion and superior thermal characteristics in isotope-enriched hexagonal boron nitride thin films: evaluation as thermally self-dissipating dielectrics for GaN transistors

Abstract

The isotope-enriched h-BN films exhibited a dielectrics dispersion with low dielectric loss, below 1.3%. Their optical band gaps depend on isotopic composition (5.54 to 5.79 eV). Thermal conductivity of pure B^10/11N are enhanced by around 231%.