D. Gutsche

GaAs surface control during metalorganic vapor phase epitaxy by reflectance anisotropy spectroscopy

F. Reinhardt, W. Richter, A. B. Müller et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 67 citations

Optical Materials, Engineering, Crystal Growth Technology +16

Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98 μm) laser diodes

G. Beister, J. Maege, D. Gutsche et al. · Applied Physics Letters · 1996 · 22 citations

Catastrophic Optical Damage, Optical Materials, Engineering +17

Efficiency of arsenic and phosphorus precursors investigated by reflectance anisotropy spectroscopy

P. Kurpas, J. Jönsson, W. Richter et al. · Journal of Crystal Growth · 1994 · 20 citations

Materials Science, Phosphorus Precursors, Engineering +10

Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide

E. Richter, P. Kurpas, D. Gutsche et al. · Journal of Electronic Materials · 1995 · 17 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +5

Transport and reaction behaviour in Aix-2000 planetary metalorganic vapour phase epitaxy reactor

T. Bergunde, D. Gutsche, L. Kadinski et al. · Journal of Crystal Growth · 1995 · 14 citations

Chemical Engineering, Engineering, Transport Phenomena +4