Toru Yoshie

Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

Koichi Murata, Satoshi Mitomo, Takuma Matsuda et al. · physica status solidi (a) · 2016 · 49 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +11

Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

Takeshi Ohshima, Takashi Yokoseki, Koichi Murata et al. · Japanese Journal of Applied Physics · 2015 · 24 citations

Semiconductor Technology, Electrical Engineering, Engineering +10

Ultrathin pore-seal film by plasma enhanced chemical vapor deposition SiCH from tetramethylsilane

Akira Furuya, Katsumi Yoneda, E. Soda et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2005 · 21 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Effects of Substrate on the Growth Characteristics of Silicon Oxide Films Deposited by Atmospheric Pressure Chemical Vapor Deposition Using Si (  OC 2 H 5 ) 4 and  O 3

Masaki Yoshimaru, Toru Yoshie · Journal of The Electrochemical Society · 1998 · 20 citations

Materials Science, Growth Characteristics, Tetraethylorthosilicate Adsorption Sites +13

Radiation Response of Negative Gate Biased SiC MOSFETs

Akinori Takeyama, Takahiro Makino, Shuichi Okubo et al. · Materials · 2019 · 18 citations · Full text