S.-L. Zhang

Self-aligned silicides for Ohmic contacts in complementary metal–oxide–semiconductor technology: TiSi2, CoSi2, and NiSi

S.-L. Zhang, U. Smith · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2004 · 85 citations

Engineering, Self-aligned Silicides, Semiconductor Device +17

Silicon nitride films deposited from SiH2Cl2NH3 by low pressure chemical vapor deposition: kinetics, thermodynamics, composition and structure

S.-L. Zhang, J.-T. Wang, Wayne D. Kaplan et al. · Thin Solid Films · 1992 · 28 citations

Chemical vapor deposition of undoped and <i>in-situ</i> boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

J. Pejnefors, S.-L. Zhang, Henry H. Radamson et al. · Journal of Applied Physics · 2000 · 21 citations

Growth Rates, Engineering, Polycrystalline Silicon Films +16

On DC modeling of the base resistance in bipolar transistors

M. Linder, F. Ingvarson, K.O. Jeppson et al. · Solid-State Electronics · 2000 · 13 citations

Device Modeling, Electrical Engineering, Engineering +6

Electrical properties of the TiSi2–Si transition region in contacts: The influence of an interposed layer of Nb

Jonas Åberg, Stefan Persson, P.‐E. Hellberg et al. · Journal of Applied Physics · 2001 · 11 citations

Engineering, Silicon On Insulator, Electrical Properties +19