Concepedia

Steve Motzny

SM

Statistics

Publications

6

Citations

149

H-Index

6

Active since

2017

Affiliations

Indian Institute of Technology Bombay(Current)

Synopsys (United States)

San Jose State University

Synopsys (Switzerland)

Steve Motzny is an author at Indian Institute of Technology Bombay specializing in microelectronics, applied physics, and device modeling.

Top concepts

EngineeringApplied PhysicsDevice ModelingMicroelectronicsPhysicsElectrical EngineeringNanoelectronicsNumerical SimulationMaterials EngineeringCondensed Matter Physics

Publications per year

2017–2020

6

Publications

6

A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact

Ravi Tiwari, Narendra Parihar, Karansingh Thakor et al. · IEEE Transactions on Electron Devices · 2019 · 54 citations

Device Modeling, Electrical Engineering, Physical Design (Electronics) +14

A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling

Ravi Tiwari, Narendra Parihar, Karansingh Thakor et al. · IEEE Transactions on Electron Devices · 2019 · 32 citations

Engineering, Finfet Dimension Scaling, Integrated Circuits +19

Modeling of Process (Ge, N) Dependence and Mechanical Strain Impact on NBTI in HKMG SiGe GF FDSOI p-MOSFETs and RMG p-FinFETs

Narendra Parihar, Ravi Tiwari, Cheikh Ndiaye et al. · 2018 · 23 citations

Device Modeling, Materials Engineering, Electrical Engineering +13

TCAD Framework for HCD Kinetics in Low V<sub>D</sub> Devices Spanning Full V<sub>G</sub>/V<sub>D</sub> Space

Uma Sharma, Meng Duan, Himanshu Diwakar et al. · IEEE Transactions on Electron Devices · 2020 · 16 citations

Engineering, Hot Carrier Degradation, Computational Chemistry +17

Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials

Subrat Mishra, Hiu Yung Wong, Ravi Tiwari et al. · 2017 · 14 citations

Engineering, Nbti Stress-recovery, Gaa Nwfets +17

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