V.I. Rusanovsky

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Active since

1996

Affiliations

Research Institute of Precision Instruments (Russia)(Current)

V.I. Rusanovsky is an author at Research Institute of Precision Instruments (Russia) specializing in semiconductor devices, microelectronics, and engineering.

Publications per year

1996–1997

Publications

The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

V.B. Maslov, S.V. Cherepko, I.N. Shvetzov-Shilovsky et al. · IEEE Transactions on Nuclear Science · 1997 · 50 citations

Engineering, Electrical Engineering, Microelectronics +16

Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures

S.V. Cherepko, Armen V. Sogoyan, V.V. Belyakov et al. · IEEE Transactions on Nuclear Science · 1996 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

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