J. Müllhäuser

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Publications

Citations

232

H-Index

Active since

1997

Affiliations

Paul Drude Institute for Solid State Electronics(Current)

J. Müllhäuser is an author at Paul Drude Institute for Solid State Electronics specializing in materials science, semiconductor materials, and electronic materials.

Publications per year

1997–2000

Publications

Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

Shigefusa F. Chichibu, Kazumi Wada, J. Müllhäuser et al. · Applied Physics Letters · 2000 · 52 citations

Engineering, Materials Engineering, Materials Science +17

Recombination dynamics in GaN

O. Brandt, H.‐J. Wünsche, Hui Yang et al. · Journal of Crystal Growth · 1998 · 46 citations

Medicine, Materials Engineering, Electronic Materials +11

Cubic (In,Ga)N layers grown on GaAs(001) by dc plasma-assisted molecular beam epitaxy

Bin Yang, O. Brandt, B. Jenichen et al. · Journal of Applied Physics · 1997 · 39 citations

Engineering, Materials Science, Physics +15

Characterization of zinc blende InxGa1−xN grown by radio frequency plasma assisted molecular beam epitaxy on GaAs (001)

J. Müllhäuser, B. Jenichen, M. Wassermeier et al. · Applied Physics Letters · 1997 · 21 citations

Engineering, Materials Engineering, Materials Science +17

Properties of cubic (In,Ga)N grown by molecular beam epitaxy

O. Brandt, J. Müllhäuser, A. Trampert et al. · Materials Science and Engineering B · 1999 · 21 citations

Natural Sciences, Materials Engineering, Materials Science +11

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