Sheyang Ning

Investigation and Improvement of Verify-Program in Carbon Nanotube-Based Nonvolatile Memory

Sheyang Ning, Tomoko Ogura Iwasaki, Kazuya Shimomura et al. · IEEE Transactions on Electron Devices · 2015 · 18 citations

Non-volatile Memory, Engineering, Nanodevices +18

Control gate length, spacing, channel hole diameter, and stacked layer number design for bit-cost scalable-type three-dimensional stackable NAND flash memory

Kousuke Miyaji, Yuki Yanagihara, Reo Hirasawa et al. · Japanese Journal of Applied Physics · 2014 · 14 citations

Planar Nand, Engineering, Emerging Memory Technology +17

19.6 Hybrid storage of ReRAM/TLC NAND Flash with RAID-5/6 for cloud data centers

Shuhei Tanakamaru, Hiroki Yamazawa, Tsukasa Tokutomi et al. · 2014 · 14 citations

Storage Performance, Engineering, Emerging Memory Technology +16

Write stress reduction in 50nm Al<inf>x</inf>O<inf>y</inf> ReRAM improves endurance 1.4× and write time, energy by 17%

Sheyang Ning, Tomoko Ogura Iwasaki, Ken Takeuchi · 2013 · 13 citations

Non-volatile Memory, Write Speed, Engineering +19

Advanced Bit Flip Concatenates BCH Code Demonstrates 0.93% Correctable BER and Faster Decoding on (36 864, 32 768) Emerging Memories

Sheyang Ning · IEEE Transactions on Circuits and Systems I Regular Papers · 2018 · 12 citations

Hardware Security, Error Correction Ability, Hypothetical Memory Array +12