T.W. MacElwee

An assessment of the state-of-the-art 0.5 μm bulk CMOS technology for RF applications

S.P. Voinigescu, S.W. Tarasewicz, T.W. MacElwee et al. · 2002 · 71 citations

Engineering, Electrical Engineering, Electronic Materials +13

Compact representation of temperature and power dependence of thermal resistance in Si, Inp and GaAs substrate devices using linear models

D.J. Walkey, T. Smy, T.W. MacElwee et al. · Solid-State Electronics · 2002 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE

James B. Webb, H. Tang, J. A. Bardwell et al. · Journal of Crystal Growth · 2001 · 27 citations

Engineering, Materials Engineering, Materials Science +14

Fabrication of high performance GaN modulation doped field effect transistors

J. A. Bardwell, Ian G. Foulds, B. Lamontagne et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

Short-channel effects on MOSFET subthreshold swing

N. G. Tarr, D.J. Walkey, M.B. Rowlandson et al. · Solid-State Electronics · 1995 · 22 citations

Engineering, Electrical Engineering, Electronic Materials +11