James B. Webb

Band-gap narrowing in heavily defect-doped ZnO

A. P. Roth, James B. Webb, D. F. Williams · Physical review. B, Condensed matter · 1982 · 289 citations

Semiconductors, Semiconductor Technology, Epitaxial Growth +13

Growth of high mobility GaN by ammonia-molecular beam epitaxy

H. Tang, James B. Webb · Applied Physics Letters · 1999 · 80 citations

Materials Engineering, Semiconductors, Electrical Engineering +12

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

Li-Hsien Huang, Shu-Hao Yeh, Ching-Ting Lee et al. · IEEE Electron Device Letters · 2008 · 57 citations

Wide-bandgap Semiconductor, Engineering, Oxidation Resistance +16

Conductivity imaging of the erosion pattern for ZnO prepared by planar R.F. magnetron sputtering

James B. Webb · Thin Solid Films · 1986 · 43 citations

Materials Science, Magnetism, Materials Engineering +9

High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors

Ta‐Ming Kuan, Shoou‐Jinn Chang, Yan-Kuin Su et al. · Japanese Journal of Applied Physics · 2003 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9