Saikumar Vivekanand

GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

Tommaso Orzali, Alexey Vert, Brendan O’Brien et al. · Journal of Applied Physics · 2015 · 57 citations · Full text

Engineering, Gaas Nucleation, Optoelectronic Devices +20

Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping

Tommaso Orzali, Alexey Vert, Brendan O’Brian et al. · Journal of Applied Physics · 2016 · 35 citations

Engineering, Optoelectronic Devices, Integrated Circuits +19

STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

Kausik Majumdar, Saikumar Vivekanand, C. Huffman et al. · IEEE Electron Device Letters · 2013 · 23 citations

Numerical Analysis, Engineering, Sidewall Tlm +21

Formation of the first phase in sputter-deposited Nb/Al multilayer thin films

Katayun Barmak, C. Michaelsen, Saikumar Vivekanand et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1998 · 17 citations

Materials Science, Aluminium Nitride, Engineering +13

Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD

Tommaso Orzali, Alexey Vert, Tae‐Woo Kim et al. · Journal of Crystal Growth · 2015 · 16 citations

Materials Science, On-axis Si, Electrical Engineering +6