S. Morarka

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

S. Natarajan, M. Agostinelli, Sheikh A. Akbar et al. · 2014 · 532 citations

Engineering, Computer Engineering, Electrical Engineering +16

Stressed multidirectional solid-phase epitaxial growth of Si

Nicholas G. Rudawski, K. S. Jones, S. Morarka et al. · Journal of Applied Physics · 2009 · 45 citations

Engineering, Materials Engineering, Materials Science +17

Modeling two-dimensional solid-phase epitaxial regrowth using level set methods

S. Morarka, N. G. Rudawski, Mark E. Law et al. · Journal of Applied Physics · 2009 · 21 citations

Natural Sciences, Materials Engineering, Materials Science +17

Level set modeling of the orientation dependence of solid phase epitaxial regrowth

S. Morarka, N. G. Rudawski, Mark E. Law · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008 · 17 citations

Engineering, Electrical Engineering, Physics +17

mmWave and sub-THz Technology Development in Intel 22nm FinFET (22FFL) Process

Qiang Yu, Said Rami, James Waldemer et al. · 2020 · 16 citations

Engineering, Electrical Engineering, Microelectronics +16