Mee‐Yi Ryu

Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Mee‐Yi Ryu, Tom Harris, Y. K. Yeo et al. · Applied Physics Letters · 2013 · 67 citations

Wide-bandgap Semiconductor, Engineering, Chemistry +17

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

Radek Roucka, Richard T. Beeler, Jay Mathews et al. · Journal of Applied Physics · 2011 · 45 citations

Engineering, Nm Responsivity, Optoelectronic Devices +19

Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials

Mee‐Yi Ryu, C. Q. Chen, E. Kuokštis et al. · Applied Physics Letters · 2002 · 41 citations

Materials Science, Conventional Mocvd, Aluminium Nitride +13

Electronic Structure of Nonionic Surfactant-Modified PEDOT:PSS and Its Application in Perovskite Solar Cells with Reduced Interface Recombination

Dongguen Shin, Donghee Kang, Jae-Bok Lee et al. · ACS Applied Materials & Interfaces · 2019 · 39 citations

Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy

Soo‐Ghang Ihn, Mee‐Yi Ryu, Jong‐In Song · Solid State Communications · 2010 · 33 citations

Electrical Engineering, Optical Materials, Engineering +7