Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy

Temperature dependence of the energy gap in semiconductors

Y. P. Varshni · Physica · 1967 · 5.3K citations

Natural Sciences, Materials Science, Physics +16

Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?

Frank Glas, Jean‐Christophe Harmand, G. Patriarche · Physical Review Letters · 2007 · 736 citations · Full text

Natural Sciences, Materials Science, Physics +17

The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP

C. D. Thurmond · Journal of The Electrochemical Society · 1975 · 680 citations

Natural Sciences, Materials Science, Physics +17

Growth and optical properties of nanometer-scale GaAs and InAs whiskers

K. Hiruma, M. Yazawa, T. Katsuyama et al. · Journal of Applied Physics · 1995 · 632 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial III−V Nanowires on Silicon

Thomas Mårtensson, C P T Svensson, Brent A. Wacaser et al. · Nano Letters · 2004 · 576 citations

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