E. K. Evangelou

Fermi-level pinning and charge neutrality level in germanium

A. Dimoulas, Polychronis Tsipas, A. Sotiropoulos et al. · Applied Physics Letters · 2006 · 595 citations

Electrical Engineering, Schottky Barrier Height, Engineering +13

Hf O 2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

A. Dimoulas, G. Mavrou, G. Vellianitis et al. · Applied Physics Letters · 2005 · 151 citations

Oxide Heterostructures, Semiconductor Technology, Electrical Engineering +13

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

G. Mavrou, S. Galata, Polychronis Tsipas et al. · Journal of Applied Physics · 2008 · 117 citations · Full text

Engineering, Low Density, Silicon On Insulator +17

Interface engineering for Ge metal-oxide–semiconductor devices

A. Dimoulas, D.P. Brunco, S. Ferrari et al. · Thin Solid Films · 2007 · 88 citations

Oxide Heterostructures, Engineering, Oxide Electronics +5

Suppressing the Photocatalytic Activity of Zinc Oxide Electron-Transport Layer in Nonfullerene Organic Solar Cells with a Pyrene-Bodipy Interlayer

Anastasia Soultati, Apostolis Verykios, Stylianos Panagiotakis et al. · ACS Applied Materials & Interfaces · 2020 · 65 citations