Carl Peterson - Concepedia

Author

Carl Peterson

University of California, Santa Barbara ORCID

Also Known As

C.K. Peterson, Carl Peterson, Peterson, Carl

Publications

623

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara University of Utah Agnitron Technology (United States)Washington State University

About

Carl Peterson is an author at University of California, Santa Barbara specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	292
2	Applied Physics	7	7	292
3	Electrical Engineering	4	4	195
4	Materials Engineering	2	2	42
5	Chemistry	1	1	12

Carl Peterson

Publications

609

Citations

H-Index

Page 1

	Year	Citations
Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, IEEE Electron Device Letters	2021	83
2.1 kV (001)- <b> <i>β</i> </b> -Ga2O3 vertical Schottky barrier diode with high-k oxide field plate Saurav Roy, Arkka Bhattacharyya, Carl Peterson, Applied Physics Letters	2023	81
High-Mobility Tri-Gate β-Ga<sub>2</sub>O<sub>3</sub> MESFETs With a Power Figure of Merit Over 0.9 GW/cm<sup>2</sup> Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga, IEEE Electron Device Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringMerit Over 0.9	2022	64
4.4 kV β-Ga<sub>2</sub>O<sub>3</sub> MESFETs with power figure of merit exceeding 100 MW cm<sup>−2</sup> Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema, Applied Physics Express Semiconductor TechnologyElectrical EngineeringEngineeringPower DeviceO 3	2022	61
β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit Saurav Roy, Arkka Bhattacharyya, Carl Peterson, IEEE Electron Device Letters Gw/cm² Power FigureDielectric SuperjunctionElectrical EngineeringDielectric PolarizationEngineering	2022	56
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers Arkka Bhattacharyya, Carl Peterson, Takeki Itoh, APL Materials Materials ScienceEngineeringLow-temperature Buffer LayersOxide ElectronicsSurface Science	2023	55
Ultra-low reverse leakage in large area kilo-volt class <i>β</i> -Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF Saurav Roy, Benjamin Kostroun, Jacqueline Cooke, Applied Physics Letters	2023	42
Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga<sub>2</sub>O<sub>3</sub> and β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Films Fikadu Alema, Carl Peterson, Arkka Bhattacharyya, IEEE Electron Device Letters	2022	34
Alloyed β-(Al<i>x</i>Ga1−<i>x</i>)2O3 bulk Czochralski single β-(Al0.1Ga0.9)2O3 and polycrystals β-(Al0.33Ga0.66)2O3, β-(Al0.5Ga0.5)2O3), and property trends Jani Jesenovec, B. Dutton, Nicholas Stone‐Weiss, Journal of Applied Physics	2022	31
Over 6 <i>μ</i>m thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) <i>β</i>-Ga2O3 drift layers Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit, Applied Physics Letters Oxide HeterostructuresMaterials ScienceMaterials EngineeringSemiconductorsEngineering	2024	30

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