Hisahiro Ansai

Advanced Analysis and Modeling of MOSFET Characteristic Fluctuation Caused by Layout Variation

H. Tsuno, Kenichi Anzai, Masao Matsumura et al. · 2007 · 61 citations

Engineering, Computer Engineering, Electrical Engineering +17

Empirical Characteristics and Extraction of Overall Variations for 65-nm MOSFETs and Beyond

Michihiro Kanno, A. Shibuya, Masao Matsumura et al. · 2007 · 33 citations

Engineering, Computer Engineering, Electrical Engineering +17

Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

Nobuyuki Kuboi, Tetsuya Tatsumi, Takashi Kinoshita et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2015 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +17

Numerical Simulation Method for Plasma-Induced Damage Profile in SiO₂ Etching

Nobuyuki Kuboi, Tetsuya Tatsumi, Shöji Kobayashi et al. · Japanese Journal of Applied Physics · 2011 · 17 citations

Natural Sciences, Materials Engineering, Materials Science +17

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Nobuyuki Kuboi, Tetsuya Tatsumi, Shöji Kobayashi et al. · Applied Physics Express · 2012 · 17 citations

Natural Sciences, Materials Engineering, Materials Science +17