Y. Sasaki

Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

Kazuo Tsutsui, Toru Matsuda, Masamitsu Watanabe et al. · Journal of Applied Physics · 2008 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +17

Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors

Jae Wook Lee, Y. Sasaki, Moon Ju Cho et al. · Applied Physics Letters · 2013 · 30 citations

Engineering, Electrical Engineering, Physics +17

A 2nd Generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs

Jérôme Mitard, Liesbeth Witters, Y. Sasaki et al. · 2016 · 24 citations

Engineering, Electrical Engineering, Materials Science +16

New method of Plasma doping with in-situ Helium pre-amorphization

Y. Sasaki, C.G. Jin, K. Okashita et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2005 · 20 citations

Natural Sciences, Materials Science, Physics +10

B/sub 2/H/sub 6/ plasma doping with "in-situ He pre-amorphization"

Y. Sasaki, C.G. Jin, Hideo Tamura et al. · 2004 · 18 citations

Natural Sciences, Materials Science, Physics +17