M. A. García Inza

Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

S. Carbonetto, M. A. García Inza, José Lipovetzky et al. · IEEE Transactions on Nuclear Science · 2011 · 25 citations · Full text

Engineering, Electrical Engineering, Microelectronics +15

Reducing Measurement Uncertainties Using Bias Cycled Measurement in MOS Dosimetry at Different Temperatures

José Lipovetzky, E. Redín, M. A. García Inza et al. · IEEE Transactions on Nuclear Science · 2010 · 20 citations

Engineering, Electrical Engineering, Metrology +13

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

L. Sambuco Salomone, José Lipovetzky, S. Carbonetto et al. · Journal of Applied Physics · 2013 · 17 citations

Engineering, Materials Engineering, Materials Science +17

Studying ReRAM devices at Low Earth Orbits using the LabOSat platform

Mariano Barella, G. A. Sanca, F. Gomez-Marlasca et al. · Radiation Physics and Chemistry · 2018 · 13 citations · Full text

Engineering, Aerospace Engineering, Electrical Engineering +7