L. Sambuco Salomone

Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

José Lipovetzky, M. Garcia–Inza, S. Carbonetto et al. · IEEE Transactions on Nuclear Science · 2013 · 28 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

S. Carbonetto, M. A. García Inza, José Lipovetzky et al. · IEEE Transactions on Nuclear Science · 2011 · 25 citations · Full text

Engineering, Electrical Engineering, Microelectronics +15

Switched Bias Differential MOSFET Dosimeter

M. Garcia–Inza, S. Carbonetto, José Lipovetzky et al. · IEEE Transactions on Nuclear Science · 2014 · 21 citations · Full text

Engineering, Electrical Engineering, Radiation Detection +13

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

L. Sambuco Salomone, José Lipovetzky, S. Carbonetto et al. · Journal of Applied Physics · 2013 · 17 citations

Engineering, Materials Engineering, Materials Science +17

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

S. Carbonetto, M. GarcianInza, José Lipovetzky et al. · IEEE Transactions on Nuclear Science · 2014 · 14 citations · Full text

Engineering, Nuclear Engineering, Radiation Detection +13