S. Carbonetto

Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

José Lipovetzky, M. Garcia–Inza, S. Carbonetto et al. · IEEE Transactions on Nuclear Science · 2013 · 28 citations

Low-power Electronics, Electrical Engineering, New Technique +14

Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

S. Carbonetto, M. A. García Inza, José Lipovetzky et al. · IEEE Transactions on Nuclear Science · 2011 · 25 citations

Device Modeling, Electrical Engineering, Mos Devices +15

Switched Bias Differential MOSFET Dosimeter

M. Garcia–Inza, S. Carbonetto, José Lipovetzky et al. · IEEE Transactions on Nuclear Science · 2014 · 21 citations

Electrical Engineering, Engineering, Radiation Detection +13

Reducing Measurement Uncertainties Using Bias Cycled Measurement in MOS Dosimetry at Different Temperatures

José Lipovetzky, E. Redín, M. A. García Inza et al. · IEEE Transactions on Nuclear Science · 2010 · 20 citations

Sensor Calibration, Different Temperatures, Radiation Testing +15

New Fowler-Nordheim Injection, Charge Neutralization, and Gamma Tests on the REM RFT300 RADFET Dosimeter

José Lipovetzky, A. Holmes -Siedle, M. García Inza et al. · IEEE Transactions on Nuclear Science · 2012 · 18 citations