Naoya Kuriyama

Development of SOI pixel process technology

Y. Arai, T. Miyoshi, Y. Unno et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2010 · 172 citations

Engineering, Electrical Engineering, Manufacturing Processes +7

A High Near-Infrared Sensitivity Over 70-dB SNR CMOS Image Sensor With Lateral Overflow Integration Trench Capacitor

Maasa Murata, Rihito Kuroda, Yasuyuki Fujihara et al. · IEEE Transactions on Electron Devices · 2020 · 34 citations · Full text

Engineering, Biomedical Engineering, Biomedical Imaging +16

A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank

Hiroya Shike, Rihito Kuroda, Ryota Kobayashi et al. · IEEE Transactions on Electron Devices · 2021 · 24 citations · Full text

Engineering, Electrical Engineering, Photonics +15

An over 1Mfps global shutter CMOS image sensor with 480 frame storage using vertical analog memory integration

Masato Suzuki, Masato Suzuki, Rihito Kuroda et al. · 2016 · 22 citations

Engineering, Computer Engineering, Electrical Engineering +15

Progress of FD-SOI technology for monolithic pixel detectors

Masao Okihara, Hiroki Kasai, Noriyuki Miura et al. · 2012 · 17 citations

Engineering, Computer Engineering, Electrical Engineering +17