R. A. Zinovyev

Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

In‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov et al. · Applied Physics Letters · 2017 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

In‐Hwan Lee, A. Y. Polyakov, E. B. Yakimov et al. · Applied Physics Letters · 2017 · 30 citations

Engineering, Materials Engineering, Materials Science +17

Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

In‐Hwan Lee, A. Y. Polyakov, Sung-Min Hwang et al. · Applied Physics Letters · 2017 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Current relaxation analysis in AlGaN/GaN high electron mobility transistors

A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2017 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

Electron irradiation of near‐UV GaN/InGaN light emitting diodes

In‐Hwan Lee, A. Y. Polyakov, N. B. Smirnov et al. · physica status solidi (a) · 2017 · 15 citations

Engineering, Electrical Engineering, Materials Science +17