J. Alsmeier - Concepedia

Author

J. Alsmeier

Also Known As

J. Alsmeier, Johann Alsmeier

Publications

330

Citations

H-Index

Concepts

All Affiliations

J. Alsmeier is an author at IBM (United States) specializing in engineering, applied physics, and microelectronics.

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	266
2	Applied Physics	5	5	253
3	Electrical Engineering	3	3	115
4	Natural Sciences	2	2	103
5	Computer Engineering	1	1	13

J. Alsmeier

Publications

280

Citations

H-Index

Page 1

	Year	Citations
Voltage-tunable quantum dots on silicon J. Alsmeier, E. Batke, J. P. Kotthaus Physical review. B, Condensed matter Electrical EngineeringEngineeringPhysicsVoltage-tunable Quantum DotsNanotechnology	1990	86
Subband spacings of quasi-one-dimensional inversion channels on InSb J. Alsmeier, Ch. Sikorski, U. Merkt Physical review. B, Condensed matter Intersubband EnergiesFar-infrared ConductivityPhysicsEngineeringNatural Sciences	1988	81
Dimensional excitations in narrow electron inversion channels on Si J. Alsmeier, E. Batke, J. P. Kotthaus Physical review. B, Condensed matter Quantum ScienceElectron DensityEngineeringPhysicsQuantum Device	1989	48
Past and Future of 3D Flash J. Alsmeier, M. Higashitani, Sunhom Steve Paak, EngineeringComputer Animation3D ModelingComputer-aided DesignDigital Fabrication	2020	22
Anomalous narrow channel effect in trench-isolated buried-channel p-MOSFET's J. Mandelman, J. Alsmeier IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringStress-induced Leakage Current	1994	16
A 0.6 μm/sup 2/ 256 Mb trench DRAM cell with self-aligned BuriEd STrap (BEST) L. Nesbit, J. Alsmeier, B. Chen,	2002	14
A novel trench DRAM cell with a vertical access transistor and buried strap (VERI BEST) for 4 Gb/16 Gb U. Gruening, C. Radens, J. Mandelman, Electrical EngineeringEngineeringVertical Access TransistorGb/16 GbEmerging Memory Technology	2003	13

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