J. Peck

3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications

Han Wui Then, Changyang Huang, B. Krist et al. · 2019 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

Anti-ferroelectric Hf_xZr_1-xO₂ Capacitors for High-density 3-D Embedded-DRAM

Sou-Chi Chang, Nazila Haratipour, Shriram Shivaraman et al. · 2020 · 36 citations

Natural Sciences, Electrical Engineering, Materials Science +10

Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications

Han Wui Then, M. Radosavljević, Qiang Yu et al. · IEEE Microwave and Wireless Technology Letters · 2023 · 36 citations

Engineering, Electrical Engineering, Materials Science +15

Hafnia-Based FeRAM: A Path Toward Ultra-High Density for Next-Generation High-Speed Embedded Memory

Nazila Haratipour, Sou-Chi Chang, Shriram Shivaraman et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 31 citations

Engineering, Computer Engineering, Electrical Engineering +15

Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (R_ON xQ_GG) of 3.1 mohm-nC at 40V and f_T/f_MAX of 130/680GHz

Han Wui Then, M. Radosavljević, Pratik Koirala et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 27 citations

Engineering, Electrical Engineering, Materials Science +17