Michael J. Krasowski

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

Philip G. Neudeck, David J. Spry, Liang-Yü Chen et al. · IEEE Electron Device Letters · 2017 · 146 citations

Advanced Packaging, Electrical Engineering, Engineering +13

Extreme temperature 6H‐SiC JFET integrated circuit technology

Philip G. Neudeck, S.L. Garverick, David J. Spry et al. · physica status solidi (a) · 2009 · 137 citations

Electrical Engineering, Engineering, Extreme Temperature +13

Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$

Philip G. Neudeck, David J. Spry, Liang-Yü Chen et al. · IEEE Electron Device Letters · 2008 · 128 citations

Engineering, Integrated Circuits, Power Electronics +17

Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits

Philip G. Neudeck, David J. Spry, Michael J. Krasowski et al. · Journal of Microelectronics and Electronic Packaging · 2018 · 41 citations

Durability Results, Electrical Engineering, Semiconductor Device +12

Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits

David J. Spry, Philip G. Neudeck, Liang-Yü Chen et al. · Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) · 2016 · 26 citations

Stable Electrical Operation, Electrical Engineering, Electronic Devices +15