J. F. Rochette

Characterization of Ga0.47In0.53As and Al0.48In0.52As layers grown lattice matched on InP by molecular beam epitaxy

J. Massies, J. F. Rochette, P. Étienne et al. · Journal of Crystal Growth · 1983 · 28 citations

Natural Sciences, Materials Science, Physics +14

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> chemical etching of GaAs(001) and InP(001) substrates by gaseous HCl prior to molecular-beam epitaxy growth

J. P. Contour, J. Massies, A. Salètes et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 21 citations

Engineering, Materials Engineering, Materials Science +17

Electron spectroscopy of vacuum annealing effects on surfaces of some binary and ternary III–V semiconductors

J. Massies, J. F. Rochette, P. Delescluse · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-mobility Ga _0.47 In _0.53 As thin epitaxial layers grown by MBE, very closely lattice-matched to InP

J. Massies, J. F. Rochette, P. Delescluse et al. · Electronics Letters · 1982 · 19 citations

Natural Sciences, Materials Science, Physics +16

Highly selective reactive ion etching applied to the fabrication of low-noise AlGaAs GaAs FET's

Jean Vatus, Joël Chevrier, P. Delescluse et al. · IEEE Transactions on Electron Devices · 1986 · 19 citations

Engineering, Electrical Engineering, Materials Science +14