N. Balasubramanian

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

Navab Singh, Ajay Agarwal, L. K. Bera et al. · IEEE Electron Device Letters · 2006 · 636 citations

Engineering, Integrated Circuits, Silicon On Insulator +19

Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications

Navab Singh, Kavitha D. Buddharaju, S. K. Manhas et al. · IEEE Transactions on Electron Devices · 2008 · 167 citations

Engineering, Biochemical Sensors, Cmos Architecture +19

Highly sensitive measurements of PNA-DNA hybridization using oxide-etched silicon nanowire biosensors

Guojun Zhang, Jay Huiyi Chua, Ru-Ern Chee et al. · Biosensors and Bioelectronics · 2008 · 158 citations

Engineering, Biosensing Systems, Biomedical Diagnostics +9

Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

Navab Singh, F. Y. Lim, Weiwei Fang et al. · 2006 · 156 citations

Engineering, Silicon On Insulator, Semiconductor Device +17

CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

S.C. Rustagi, Navab Singh, Weiwei Fang et al. · IEEE Electron Device Letters · 2007 · 87 citations

Low-power Electronics, Semiconductor Technology, Electrical Engineering +13