Correlation on GaN epilayer quality and strain in GaN-based LEDs grown on 4-in. Si(1 1 1) substrate

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

Engineering, Electrical Engineering, Materials Science +17

Strain-related phenomena in GaN thin films

C. Kisielowski, Joachim Krüger, S. Ruvimov et al. · Physical review. B, Condensed matter · 1996 · 886 citations

Natural Sciences, Materials Engineering, Materials Science +17

Elastic constants of gallium nitride

A. Polian, M. Grimsditch, I. Grzegory · Journal of Applied Physics · 1996 · 621 citations

Natural Sciences, Materials Science, Physics +13

Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and <i>c</i>-plane sapphire

Degang Zhao, Shijie Xu, Mingyu Xie et al. · Applied Physics Letters · 2003 · 420 citations

Engineering, Materials Engineering, Materials Science +17

Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)

S. Tripathy, S. J. Chua, P. Chen et al. · Journal of Applied Physics · 2002 · 287 citations

Natural Sciences, Materials Engineering, Materials Science +17