Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with Ne⁺⁺Neon Ions

Abstract

The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of Ne ++ neon ions. An analysis of electrical properties recorded at the annealing temperature of Ta = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.