Concepedia
Statistics
Publications
12
Citations
331
H-Index
11
Active since
1971
Affiliations
University of Hull(Current)
Ricardo AEA (United Kingdom)
Research Complex at Harwell
KU Leuven
Clarendon College
D. H. J. Totterdell is an author at University of Hull specializing in materials science, electronic materials, and semiconductor defects.
Publications per year
1971–1993
A new study of critical layer thickness, stability and strain relaxation in pseudomorphic ge<sub>x</sub>si<sub>1-x</sub>strained epilayers
Suresh C. Jain, T. J. Gosling, J.R. Willis et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1992 · 74 citations
Natural Sciences, Materials Engineering, Materials Science +17
An optical study of defects in silicon irradiated with fast neutrons
R. C. Newman, D. H. J. Totterdell · Journal of Physics C Solid State Physics · 1975 · 50 citations
Natural Sciences, Materials Science, Physics +17
Interstitial defects involving carbon in irradiated silicon
M.R. Brozel, R.C. Newman, D. H. J. Totterdell · Journal of Physics C Solid State Physics · 1975 · 38 citations
Engineering, Materials Engineering, Materials Science +14
Interstitial defects involving boron in irradiated silicon
K. Laithwaite, R. C. Newman, D. H. J. Totterdell · Journal of Physics C Solid State Physics · 1975 · 36 citations
pMOS Dosimeters: Long-Term Annealing and Neutron Response
N.G. Blamires, D. H. J. Totterdell, Andrew Holmes‐Siedle et al. · IEEE Transactions on Nuclear Science · 1986 · 32 citations
Engineering, Electrical Engineering, Materials Science +13
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