The Hall effect in β-FeSi2 single crystals

Abstract

The results of the transport and magnetization measurements on β-FeSi2 single crystals are presented. The magnetic field dependence of the Hall coefficient in n-type β-FeSi2 was observed in the temperature range of 30–300 K and explained in the limits of a two-band model. The magnetization measurements were performed within the range 4.2–300 K. It was shown that the contribution of the anomalous Hall effect to the total Hall voltage is negligible. Parameters of charge carriers, taking part in conductivity were calculated and the separation between the bands was estimated.