OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1987 · 71 citations · 0 references
Materials ScienceSemiconductorsMaterials EngineeringSemiconductor TechnologyEngineeringElectronic MaterialsApplied PhysicsSemiconductor MaterialsSilicon IiMultilayer HeterostructuresSemiconductor Device FabricationMolecular Beam EpitaxySilicon On InsulatorEpitaxial GrowthChemical Vapor DepositionSilicon Epitaxy
These proceedings collect papers on silicon epitaxy. Topics include: Molecular beam epitaxy, chemical vapor deposition, annealing, transmission electron microscopy, semiconductor device fabrication, doped materials, gallium arsenide, and gallium phosphides.