Radiation defects induced by 20MeV electrons in MOS structures

The evaluation of electron trapping parameters from conductivity glow curves in cadmium sulphide

K. H. Nicholas, J. Woods · British Journal of Applied Physics · 1964 · 398 citations

Engineering, Materials Engineering, Materials Science +14

Electron and γ-irradiation of ion implanted MOS structures with different oxide thickness

S. Kaschieva, S. N. Dmitriev, Ch. Angelov · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 14 citations

Engineering, Materials Engineering, Materials Science +12

Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

Kazuhiko Shinoda, Eiji Ohta · Applied Physics Letters · 1992 · 13 citations

Natural Sciences, Materials Science, Electronic Materials +16

High energy electron irradiation of ion implanted MOS structures with different oxide thickness

S. Kaschieva, S. Alexandrova · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 11 citations

Engineering, Materials Engineering, Materials Science +14

Electrical characterization of defects induced by 12 MeV electrons in p—type Si-SiO2 structures

K.G. Stefanov, S. Kaschieva, D.S. Karpuzov · Vacuum · 1998 · 10 citations

Natural Sciences, Materials Science, Physics +16