Ultralow dark current and high specific detectivity of Ga ₂ O ₃ -based solar-blind photodetector arrays realized <i>via</i> post-annealing in oxygen plasma

Abstract

A photodetector based on Ga 2 O 3 thin films via post-annealing in oxygen plasma features excellent overall performance with an ultralow dark current of 44 fA, a high specific detectivity of 1.45 × 10 16 Jones, a decay time of 58 ms, etc. (@20 V).