Low-Intensity Light Detection with a High Detectivity Using 2D-Sb₂Se₃ Nanoflakes on 1D-ZnO Nanorods as Heterojunction Photodetectors

Abstract

Multifunctional photodetectors (PDs) with broadband responsivity ( R ) and specific detectivity ( D *) at low light intensities are gaining significant attention. Thus, we report a bilayer PD creatively fabricated by layering two-dimensional (2D) Sb 2 Se 3 nanoflakes (NFs) on one-dimensional (1D) ZnO nanorods (NRs) using simple thermal transfer and hydrothermal processes. The unique coupling of these two layers of materials in a nanostructured form, such as 2D-Sb 2 Se 3 NFs/1D-ZnO NRs, provides an effective large surface area, robust charge transport paths, and light-trapping effects that enhance light harvesting. Furthermore, the combination of both layers can effectively facilitate photoactivity owing to proper band alignment. The as-fabricated device demonstrated superior overall performance in terms of a suitable bandwidth, good R, and high D * under low-intensity light, unlike the single-layered 1D-ZnO NRs and 2D-Sb 2 Se 3 NF structures alone, which had poor detectivity or response in the measured spectral range. The PD demonstrated a spectral photoresponse ranging from ultraviolet (UV) to visible (220–628 nm) light at intensities as low as 0.15 mW·cm –2 . The PD yielded a D * value of 3.15 × 10 13 Jones (220 nm), which reached up to 5.95 × 10 13 Jones in the visible light region (628 nm) at a 3 V bias. This study demonstrated that the 2D-Sb 2 Se 3 NFs/1D-ZnO NRs PD has excellent potential for low-intensity light detection with a broad bandwidth, which is useful for signal communications and optoelectronic systems.