Ultralow-Noise MoS₂/Type II Superlattice Mixed-Dimensional van der Waals Barrier Long-Wave Infrared Detector

Abstract

Low-noise, high-performance long-wave infrared detectors play a crucial role in diverse applications, including in the industrial, security, and medical fields. However, the current performance of long-wave detectors is constrained by the noise associated with narrow bandgaps. Therefore, exploring novel heterostructures for long-wavelength infrared detection is advantageous for the development of compact and high-performance infrared sensing. In this investigation, we present a MoS 2 /type II superlattice mixed-dimensional van der Waals barrier long-wave infrared detector (Mixed-vdWH). Through the design of the valence band barrier, substantial suppression of device dark noise is achieved, resulting in 2 orders of magnitude reduction in dark current. The device exhibits outstanding performance, with D * reaching 4 × 10 10 Jones. This integration approach synergizes the distinctive properties of two-dimensional layered materials (2DLM) with the well-established processing techniques of traditional three-dimensional semiconductor materials, offering a compelling avenue for the large-scale integration of 2DLM.