Distribution of basal plane dislocations in 4-degree off-axis 4H-SiC single crystals

Sheng'ou Lu, Binjie Xu, Yazhe Wang, Hongyu Chen, Wei Hang, Rong Wang, Julong Yuan, Xiaodong Pi, Deren Yang, Xuefeng Han

CrystEngComm · 2024 · 15 citations · 34 references

Concepts

Abstract

The basal plane slip model in 4H-SiC was developed to investigate the effects of off-axis angles on total resolved shear stress. The results showed that the TRSS changed from 6-fold to 4-fold symmetry with the increasing off-axis angles.

References

34