Intrinsically Stretchable n-Type Organic Transistor Based on Elastic Hybrid Network Semiconducting Film

Abstract

Intrinsically stretchable organic field-effect transistors (OFETs) are actively researched in wearable electronics because of their outstanding advantages including high mechanical deformation, low-cost and stable electrical performance. However, the investigation of intrinsically stretchable n-type OFETs, crucial for logic circuits, remains limited. Here, intrinsically stretchable n-type OFETs based on elastic hybrid network semiconducting film were fabricated. The stretchable n-type semiconducting films present a high crack-onset strain of 110% strain (original 4%) and high electron mobility of 0.12 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{2}}\,\,\text{V}^{-{1}}\,\,\text{s}^{-{1}}$ </tex-math></inline-formula> . Based on the stretchable semiconducting film, the intrinsically stretchable n-type OFETs show stable electrical performance at 50% strain and could stably drive LED under <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\approx 25$ </tex-math></inline-formula> % strain. Our work provides a simple co-mixing strategy to improve the stretchability of n-type semiconductors and applies it to intrinsically stretchable n-type organic field-effect transistors, showing great promise for applications in the integration of wearable electronics.