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Investigation and Comparison of Temperature-Sensitive Electrical Parameters of SiC mosfet at Extremely High Temperatures
37
Citations
26
References
2023
Year
EngineeringPower ElectronicsSemiconductor DeviceDifferent Temperature RangesThermal AnalysisPower SemiconductorsPower Electronic DevicesElectrical EngineeringBias Temperature InstabilityPower Semiconductor DeviceTemperature-sensitive Electrical ParametersHigh TemperaturesHeat TransferDevice ReliabilityMicroelectronicsExtreme Environment ElectronicsSic MosfetHigh Temperature MaterialsLow TemperaturesThermal EngineeringPower DeviceApplied PhysicsTemperature MeasurementHigh TemperatureCarbideThermal Properties
Due to the excellent silicon carbide (SiC) material characteristics, SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s can operate at extremely high temperatures and can be used in harsh environment applications. In this case, it is crucial to ensure the reliability of the power electronic systems. The temperature-sensitive electrical parameters (TSEPs) have been used for online junction temperature monitoring to monitor the health condition of the SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> at low temperatures (<175 °C). However, the performance of the TSEPs at extremely high temperatures is still unknown, and the influence of temperature on the TSEPs of SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s at extremely high temperatures is unclear. In this article, the theoretical mechanisms of the impact of the extremely high temperature on TSEPs are investigated in detail. In particular, the different effects of high temperature on the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> delay time and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> delay time are discussed carefully. Based on the proposed high-temperature characteristic test method, the TSEPs of SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> (including static and dynamic characteristics) are tested and analyzed comprehensively from room temperature to 375 °C. And the sensitivity and linearity of the TSEPs in different temperature ranges are analyzed and compared. According to the results, threshold voltage and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> delay time are the two TSEPs with good sensitivity and linearity over a wide temperature range (from room temperature to 375 °C). And the linearity of the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> delay time is the best among all TSEPs over a wide temperature range.
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