Scalable Ultrahigh Voltage SiC Superjunction Device Technologies for Power Electronics Applications

Abstract

We comparatively review charge-balanced and conventional vertical-pillar superjunction SiC power device structures, with particular emphasis on implementations using high-energy (MeV) implantations. These superjunction diodes and MOSFETs offer specific on-resistance below the SiC unipolar limit and a scalable path towards realization of high frequency switches required for 3-20kV power electronics applications. For the first time, we experimentally demonstrate 3.8kV deep-implanted SiC superjunction JBS diodes formed with only two rounds of epitaxial overgrowth and high-energy implantations.