Organic Monolayers on Si(211) for Triboelectricity Generation: Etching Optimization and Relationship between the Electrochemistry and Current Output

Abstract

Triboelectric nanogenerators (TENGs) based on sliding silicon–organic monolayer–metal Schottky diodes are an emerging autonomous direct-current (DC) current supply technology. Herein, using conductive atomic force microscopy and electrochemical techniques, we explore the optimal etching conditions toward the preparation of DC TENGs on Si(211), a readily available, highly conductive, and underexplored silicon crystallographic cut. We report optimized conditions for the chemical etching of Si(211) surfaces with subnanometer root-mean-square roughness, explore Si(211) chemical passivation, and unveil a relationship between the electrochemical charge-transfer behavior at the silicon–liquid interface and the zero-applied bias current output from the corresponding dynamic silicon–organic monolayer–platinum system. The overall aim is to optimize the etching and functionalization of the relatively underexplored Si(211) facet, toward its application in out-of-equilibrium Schottky diodes as autonomous power supplies. We also propose the electrochemical behavior of surface-confined redox couples as a diagnostic tool to anticipate whether or not a given surface will perform satisfactorily when used in a TENG design.