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5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology

DOI

18

Citations

0

References

2022

Year

Qiang Yu, Han Wui Then, Derek S. Thomson, Jessica L. Chou, Jeffrey Garrett, Iwen Huang, Ibukunoluwa Momson, Surej Ravikumar, Seahee Hwangbo, Alvaro D. Latorre-Rey,
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Abstract

This paper presents fully integrated power amplifier (PA) and low-noise amplifier (LNA) targeting 5G mmWave band n260 (37GHz-40GHz) in 300mm GaN-on-Si technology. At 39.5GHz, the PA achieves measured P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</inf> , peak PAE, linear gain, and OP1dB of 25dBm, 38.8%, 24.8dB, and 19.8dBm, occupying only 0.079mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The LNA achieves 24.6dB gain, 2.9dB noise figure, and -11.4dBm IIP3 at 38GHz. Both circuits are compact and viable candidates for phased arrays in mobile devices. This is industry’s first demonstration of mmWave circuits in 300mm GaN-on-Si technology.