Applied Physics Letters · 2022 · 10 citations · 28 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsMemristive MaterialsOxide SemiconductorsQuantum DotsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsFilm ThicknessMemristive MemoryNonvolatile Memory MaterialsQuantum Dot DevicesRandom-access MemoryResistive Random-access MemoryResistive SwitchingResistive Switching Materials
The introduction of PbS QD (quantum dot) films has been proved, dramatically, to optimize the resistive switching (RS) performance in oxide resistive random access memory. In order to optimize parameters to a greater extent, the necessity of in-depth understanding of the resistance switching mechanism is self-evident. In this paper, PbS QD layers were inserted into a Ta/AlOxNy/Pt structure device in different positions in order to investigate the influence of the device structure in the PbS QD film inserted device. The Ta/PbS QDs/AlOxNy/Pt device with a Ta anion reservoir and a PbS QD film anion reservoir in the same direction exhibits excellent optimization of parameters, which is ideal for low-power devices. A model is constructed to elaborate the resistive switching process. Moreover, modulation of PbS QD film thickness on RS has been studied. A device with middle thickness of the PbS QD films combines low voltage, low current, and excellent stability, which is believed to be a favorable structure for the PbS QD inserted device.
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ZnO Schottky barriers and Ohmic contacts
L. J. Brillson, Yicheng Lu · Journal of Applied Physics · 2011 · 678 citations