Characteristics of a SiC MOSFET-based Double Side Cooled High Performance Power Module for Automotive Traction Inverter Applications

Abstract

This paper presents a high performance Double Side Cooled (DSC) module based on trench Silicon Carbide (SiC) MOSFETs. The module thermal stack is optimized to reach a superior thermal performance and thereby, a high current density. The stray inductance of the module is minimized to allow the usage of a lower breakdown voltage semiconductor, allowing for further optimization of its conduction performance. The module is experimentally characterized, and compared with a Silicon- (Si) based Module to evaluate the efficiency benefits of SiC at the inverter level.