Applied Physics Letters · 2003 · 91 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionDopingLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsCharge InjectionCurrent EfficiencyCurrent Injection EfficiencyIndium Tin Oxide Thin FilmsLight-emitting DevicesOrganic Light-emitting DiodesPlasma-enhanced Chemical Vapor DepositionTin-doped Indium Oxide
A transparent-charge-injection layer consisting of LiF/Al/Al-doped SiO has been developed as (i) a cathode for top-emitting organic light-emitting diodes and as (ii) a buffer layer against damages induced by energetic ions generated during deposition of other functional thin films by sputtering, or plasma-enhanced chemical vapor deposition. A luminance of 1900 cd/m2 and a current efficiency of 4 cd/A have been achieved in a simple testing device structure of indium tin oxide (ITO) N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (60 nm)/Alq3 (40 nm)/LiF (0.5 nm)/Al (3 nm)/Al-doped SiO (30 nm). A minimum thickness of 30 nm of Al-doped SiO is also found to protect organic layers from ITO sputtering damage.
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Weak microcavity effects in organic light-emitting devices
Vladimir Bulović, V. Khalfin, G. Gu et al. · Physical review. B, Condensed matter · 1998 · 500 citations
Natural Sciences, Electrical Engineering, Materials Science +17
Transparent organic light emitting devices
G. Gu, Vladimir Bulović, P. E. Burrows et al. · Applied Physics Letters · 1996 · 441 citations
A metal-free cathode for organic semiconductor devices
G. Parthasarathy, P. E. Burrows, V. Khalfin et al. · Applied Physics Letters · 1998 · 281 citations
Natural Sciences, Materials Engineering, Materials Science +17